收藏本站

DMN5L06V/VA
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
?
?
?
?
?
?
?
?
?
Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
“Green” Device (Note 3)
?
?
?
?
?
?
?
?
Case: SOT-563
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish ? Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
TOP VIEW
SOT-563
D 2
S 2
G 1
G 2
S 1
D 1
D 2
G 2
S 1
S 2
G 1
D 1
DMN5L06V
(KAH Marking Code)
DMN5L06VA
(KAG Marking Code)
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R GS ≤ 1.0M Ω
Symbol
V DSS
V DGR
Value
50
50
Units
V
V
Gate-Source Voltage
Drain Current (Note 1)
Drain Current (Note 1)
Continuous
Pulsed
Continuous
Pulsed
V GSS
I D
I DM
±20
±40
280
1.5
V
mA
A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
P d
R θ JA
T j, T STG
Value
150
833
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV DSS
50
?
?
V
V GS = 0V, I D = 10 μ A
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T C = 25°C
@ T C = 125°C
I DSS
I GSS
?
?
?
?
0.1
500
±20
μA
nA
V DS = 50V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
V GS(th)
R DS (ON)
I D(ON)
|Y fs |
V SD
0.49
?
?
0.5
200
0.5
?
1.6
2.2
1.0
?
?
1.2
3
4
?
?
1.4
V
Ω
A
mS
V
V DS = V GS , I D = 250 μ A
V GS = 2.7V, I D = 0.2A,
V GS = 1.8V, I D = 50mA
V GS = 10V, V DS = 7.5V
V DS =10V, I D = 0.2A
V GS = 0V , I S = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
?
50
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
?
?
?
?
25
5.0
pF
pF
V DS = 25V, V GS = 0V, f = 1.0MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMN5L06V/VA
Document number: DS30604 Rev. 8 - 2
1 of 4
www.diodes.com
October 2007
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMN5L06VAK-7 MOSFET N-CHAN DUAL 50V SOT-563
DMN5L06WK-7 MOSFET N-CH 50V 300MA SC70-3
DMN601DMK-7 MOSFET N-CH DUAL 60V 225MW SOT26
DMN601DWK-7 MOSFET N-CH DL 60V 200MW SOT-363
DMN601K-7 MOSFET N-CH 60V 300MA SOT23-3
DMN601TK-7 MOSFET N-CH 60V 300MA SOT-523
DMN601VK-7 MOSFET N-CH DL 60V 250MW SOT-563
DMN601WK-7 MOSFET N-CH 60V 300MA SC70-3
相关代理商/技术参数
DMN5L06VAK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06VAK-7 功能描述:MOSFET 20V 280mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN5L06VK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06VK-7 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN5L06W 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06W-7 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN5L06WK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06WK_09 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET